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| HFA04SD60SPBF Vishay High Power Products HEXFRED(R) Ultrafast Soft Recovery Diode, 4 A FEATURES * * * * * * * * Ultrafast recovery time Ultrasoft recovery Very low IRRM Very low Qrr Guaranteed avalanche Specified at operating temperature Lead (Pb)-free Designed and qualified for Q101 level Available 2 RoHS* COMPLIANT D-PAK 1 N/C 3 Anode BENEFITS * * * * * Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count PRODUCT SUMMARY VR VF at 4 A at 25 C IF(AV) trr (typical) TJ (maximum) 600 V 1.8 V 4A 17 ns 150 C DESCRIPTION/APPLICATIONS These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for freewheeling, flyback, power converters, motor drives, and other applications where high speed and reduced switching losses are design requirements. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Maximum continuous forward current Single pulse forward current Repetitive peak forward current Maximum power dissipation Operating junction and storage temperatures SYMBOL VRRM IF(AV) IFSM IFRM PD TJ, TStg TC = 116 C TC = 100 C TC = 100 C TEST CONDITIONS VALUES 600 4 25 16 10 - 55 to 150 W C A UNITS V ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage See fig. 1 Maximum reverse leakage current Junction capacitance Series inductance SYMBOL VBR, VR VF IR = 100 A IF = 4 A IF = 8 A IF = 4 A, TJ = 125 C IR CT LS VR = VR rated TJ = 125 C, VR = 0.8 x VR rated VR = 200 V Measured lead to lead 5 mm from package body TEST CONDITIONS MIN. 600 TYP. 1.5 1.8 1.4 0.17 44 4 8.0 MAX. 1.8 2.2 1.7 3.0 300 8 A pF nH V UNITS * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94034 Revision: 29-Jul-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1 HFA04SD60SPBF Vishay High Power Products HEXFRED(R) Ultrafast Soft Recovery Diode, 4 A DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1.0 A, dIF/dt = 200 A/A, VR = 30 V Reverse recovery time trr TJ = 25 C TJ = 125 C Peak recovery current IRRM Qrr TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C IF = 4 A dIF/dt = 200 A/s VR = 200 V MIN. TYP. 17 28 38 2.9 3.7 40 70 280 235 MAX. 42 57 5.2 6.7 60 105 A ns UNITS Reverse recovery charge nC Rate of fall of recovery current dI(rec)M/dt A/s THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Soldering temperature Thermal resistance, junction to case Thermal resistance, junction to ambient Weight Mounting torque Marking device Case style D-PAK SYMBOL TJ, TStg TS RthJC RthJA Typical socket mount 10 s TEST CONDITIONS MIN. - 55 6.0 (5.0) TYP. 2.0 0.07 MAX. 150 240 5.0 80 12 (10) g oz. kgf * cm (lbf in) C/W UNITS C HFA04SD60S www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 94034 Revision: 29-Jul-08 HFA04SD60SPBF HEXFRED(R) Vishay High Power Products Ultrafast Soft Recovery Diode, 4 A 100 1000 IR - Reverse Current (A) 100 10 1 0.1 0.01 0.001 TJ = 150 C IF - Instantaneous Forward Current (A) 10 TJ = 125 C 1 TJ = 175 C TJ = 125 C TJ = 25 C TJ = 25 C 0.1 0 1 2 3 4 5 6 0 100 200 300 400 500 VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 100 CT - Junction Capacitance (pF) TJ = 25 C 10 1 1 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (C/W) 10 1 PDM 0.1 Single pulse (thermal resistance) D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.0001 0.001 t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 0.01 0.00001 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94034 Revision: 29-Jul-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 HFA04SD60SPBF Vishay High Power Products 50 IF = 8 A IF = 4 A 40 HEXFRED(R) Ultrafast Soft Recovery Diode, 4 A 200 180 160 140 VR = 200 V TJ = 125 C TJ = 25 C IF = 8 A IF = 4 A Qrr (nC) 30 VR = 200 V TJ = 125 C TJ = 25 C 20 100 1000 trr (ns) 120 100 80 60 40 20 100 1000 dIF/dt (A/s) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt dIF/dt (A/s) Fig. 7 - Typical Stored Charge vs. dIF/dt 14 12 10 IF = 8 A IF = 4 A 1000 IF = 8 A IF = 4 A Irr (A) 8 6 4 2 0 100 VR = 200 V TJ = 125 C TJ = 25 C 1000 dI(rec)M/dt (A/s) VR = 200 V TJ = 125 C TJ = 25 C 100 100 1000 dIF/dt (A/s) Fig. 6 - Typical Recovery Current vs. dIF/dt dIF/dt (A/s) Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 94034 Revision: 29-Jul-08 HFA04SD60SPBF HEXFRED(R) Vishay High Power Products Ultrafast Soft Recovery Diode, 4 A VR = 200 V 0.01 L = 70 H D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94034 Revision: 29-Jul-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 HFA04SD60SPBF Vishay High Power Products ORDERING INFORMATION TABLE HEXFRED(R) Ultrafast Soft Recovery Diode, 4 A Device code HFA 1 1 2 3 4 5 6 7 A 2 04 3 SD 4 60 5 S 6 PbF 7 - HEXFRED(R) family - Electron irradiated - Current rating (04 = 4 A) - D-PAK - Voltage rating (60 = 600 V) - Suffix None = Standard production PbF = Lead (Pb)-free S = D2PAK/D-PAK TR = Tape and reel TRL = Tape and reel left TRR = Tape and reel right LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information http://www.vishay.com/doc?95016 http://www.vishay.com/doc?95059 http://www.vishay.com/doc?95033 www.vishay.com 6 For technical questions, contact: diodes-tech@vishay.com Document Number: 94034 Revision: 29-Jul-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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